Method of making LDD with polysilicon and dielectric spacers

Details Method of making LDD with polysilicon and dielectric spacers Method of making LDD with polysilicon and dielectric spacers

1994-11-07

1996-03-12

Fourson, George

Fishing, trapping, and vermin destroying

437 44, 437984, 437200, 257344, H01L 218242

Patent

active

054985552

ABSTRACT:
An improved FET device in which the hot carrier immunity and current driving capability are improved, and the subthreshold leakage current is minimized. The device has a gate electrode with vertical sidewalls, and a thin layer of SiO.sub.2 over the electrode. A first polysilicon spacer is provided on the vertical sidewalls, with a second overlying oxide spacer over the first spacer. The top portion of the SiO.sub.2 layer between the gate electrode and the polysilicon spacer is made conductive enough to keep the gate electrode and the polysilicon spacer at the same potential. Lightly doped source and drain regions are provided.

REFERENCES:
patent: 5073514 (1991-12-01), Ito et al.
patent: 5089432 (1992-02-01), Yoo
patent: 5091763 (1992-02-01), Sanchez
patent: 5108939 (1992-04-01), Manley et al.
patent: 5200351 (1993-04-01), Hadjizadeh-Amini
patent: 5358879 (1994-10-01), Brady et al.

Affiliated with

Also associated with

Rating

Method of making LDD with polysilicon and dielectric spacers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making LDD with polysilicon and dielectric spacers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making LDD with polysilicon and dielectric spacers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2099541