Method of making lateral components in power semiconductor devic

Details Method of making lateral components in power semiconductor devic Method of making lateral components in power semiconductor devic

1997-01-24

1999-11-30

Dutton, Brian

Semiconductor device manufacturing: process

Making regenerative-type switching device

Altering electrical characteristic

H01L 21332

Patent

active

059941715

ABSTRACT:
A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface when it is desired to reduce the gain or sensitivity of the lateral component, and doping according to the second conductivity type, the back surface, when the gain or the sensitivity of the lateral component is to be increased.

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French Search Report from French Patent Application 96 01179, filed Jan. 26, 1996.
IEEE Transactions on Electron Devices, vol. 24, No. 3, Mar. 1977, New York, US, pp. 205-214, K.N. Bhat and M.K. Achuthan, "Current-Gain Enhancement in Lateral p-n-p Transistors by Optimized Gap in the n+ Buried Layer".
Patent Abstracts of Japan, vol. 002, No. 029 (E-017), Feb. 23, 1978 & JP-A-52 150984 (Mitsubishi Electric Corp.).
Patent Abstracts of Japan, vol. 001, No. 019 (E-004), Mar. 24, 1977 & JP-A-51 116685 (Fujitsu Ltd.).

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