Method of making large value capacitor for SOI

Details Method of making large value capacitor for SOI Method of making large value capacitor for SOI

1997-03-21

1998-06-02

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438155, H01L 218242

Patent

active

057599076

ABSTRACT:
Large capacitance, low-impedance decoupling capacitors in SOI and their method of fabrication. A high conductivity trench substrate contact is made adjacent to the capacitor by removal of insulator lining the capacitor by use of an extra mask thereby making a substrate contact when the trench is filled with doped polysilicon. The inventive process is compatible with and easily integrated into existing SOI logic technologies. The SOI decoupling capacitors are formed in trenches which pass through the silicon and buried oxide layers and into the underlying silicon substrate.

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