Method of making large area single crystalline diamond films

Details Method of making large area single crystalline diamond films Method of making large area single crystalline diamond films

1994-11-08

1995-04-11

Nguyen, Nam

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117929, C30B 2904

Patent

active

054048354

ABSTRACT:
A method of growing a large single crystalline diamond film, in which a nickel substrate is disposed within a diamond growth chamber. After air has been evacuated from the chamber and the substrate has been heated to a temperature exceeding 1145 Celsius, atomic hydrogen is continuously generated from hydrogen gas supplied to the chamber and accelerated toward the substrate, implanting hydrogen atoms in the top substrate surface and converting it to a liquid film of nickel hydride. Then one of two layers of diamond particles of two to three nanometer cross section is deposited on the liquid nickel hydride film, whereby the diamond particles arrange themselves on the liquid nickel hydride film to their lowest free energy state, forming a nascent contiguous single-crystalline diamond film. Thereafter diamond is homoepitaxially grown on the nascent contiguous single-crystalline diamond film to the desired thickness.

REFERENCES:
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patent: 5183685 (1993-02-01), Yamazaki
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patent: 5363798 (1994-11-01), Yoder
A. N. Goldstein, C. M. Echer, & A. P. Alivisatos, "Melting in Semiconductor anocrystals," Science, vol. 256, 5 Jun. 1992, pp. 425-427.
P. C. Yang, W. Zhu, & J. T. Glass, "Nucleation of Oriented Diamond Films on Nickel Substrates," J. Mater. Res. vol. 8, Aug. 1993, pp. 1773-1776.
W. Zhu, P. C. Yang & J. T. Glass, "Oriented Diamond Films Grown on Nickel Substrates," Applied Physics Letters, vol. 63, No. 12, 20 Sep. 1993, pp. 1640-1642.

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