Method of making large-area semiconductor thin films formed at l

Details Method of making large-area semiconductor thin films formed at l Method of making large-area semiconductor thin films formed at l

1994-03-24

1996-02-13

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 89, 437 90, 437126, 437132, H01L 2120

Patent

active

054911141

ABSTRACT:
A continuous semiconductor thin film is formed by providing a sheet of a substrate material and applying a continuous layer of nanocrystals of the semiconductor material onto the substrate. The layer of nanocrystals is melted at a temperature below that of the bulk, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film which forms a solid upon cooling. The nanocrystals may be sprayed onto the substrate, either from the liquid or gas phase. The substrate sheet is preferably tensioned during the application of the nanocrystalline layer, for example, with a set of rollers is used to provide the tensioning at a predetermined feed rate.

REFERENCES:
patent: 4876218 (1989-10-01), Pessa et al.
patent: 4910167 (1990-03-01), Lee et al.
patent: 5141893 (1992-08-01), Ito et al.
patent: 5262357 (1993-11-01), Alivisatos et al.
J. R. Heath, S. M. Gates, C. A. Chess, "Nanocrystal seeding: A low temperature route to polycrystalline Si films", Appl. Phys. Lett. 64(26), 27 Jun. 1994, pp. 3569-3571.
G. Samdani, S. Moore, G. Parkinson, "Tiny Particles Aim for Big Markets", Chemical Eng./Aug. 94 pp. 35-39.
Science; Goldstein, A., Echer, C., Alivisatos, A., Jun. 1992, vol. 256, pp. 1425-1427, "Melting in Semiconductor Nanocrystals".
Physical Review A; Buffat, Ph., Borel, J. P., vol. 13, No. 6, Jun. 1976 "Size effect on the melting temperature of gold particles".
Physical Review Letters; Erolessi, F., Andreoni, W., Tosatti, F., vol. 66, No. 7, Feb. 91 "Melting of Small Gold Particles".
J. Phys. D: Appl Phys; Wautelet, M., vol. 24, pp. 343-346 (1991) "Estimation of the variation of the melting temperature with the size of small particles . . . ".
Physical Review A; Berry, R., Jellinek, J., Natanson, G., vol. 30, No. 2, "Melting of clusters and melting".

Affiliated with

Also associated with

Rating

Method of making large-area semiconductor thin films formed at l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making large-area semiconductor thin films formed at l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making large-area semiconductor thin films formed at l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-240449