Method of making junction field effect transistor

Details Method of making junction field effect transistor Method of making junction field effect transistor

1984-01-09

1986-07-29

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29571W, 29583, 148187, 148191, 357 22, H01L 2138

Patent

active

046024190

ABSTRACT:
A junction field effect transistor has a substrate forming a junction with a layer of semiconductor material which has a gate, a source and a drain therein. The thickness of the n-type layer underlying the source is substantially greater than that underlying the gate (for example the ratio of n-thickness below the gate to that below the source is 1 to 2.53) in order to reduce the parasitic resistance as compared to conventional JFETs.

REFERENCES:
patent: 4170502 (1979-10-01), Watakabe
patent: 4185291 (1980-01-01), Hirao et al.
patent: 4393578 (1983-07-01), Cady et al.
patent: 4452646 (1984-06-01), Zuleeg

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