Metal treatment – Compositions – Heat treating
Patent
1980-05-08
1981-10-20
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148175, 148190, 148191, 357 48, 357 63, H01L 21265, H01L 2120
Patent
active
042958989
ABSTRACT:
In forming p.sup.+ -type isolation region to define an isolated n-type island region in an n-type epitaxial layer grown on a p-type semiconductor substrate, the p.sup.+ -type isolation region is formed by burying, prior to the growing of the epitaxial layer, an Al-ion-implanted region in the p-type substrate by means of ion implantation and subsequent heat-treatment for driving-in, thereby enabling a very quick forming of the isolation region and an accurate control of the resistivity of the epitaxial layer.
REFERENCES:
patent: 3752715 (1973-08-01), Antipov et al.
patent: 3847677 (1974-11-01), Takeda et al.
patent: 3930909 (1976-01-01), Schmitz et al.
patent: 3992232 (1976-11-01), Kaji et al.
patent: 4128439 (1978-12-01), Jambotkar
Fairfield et al., "Reducing Autodoping in Epitaxial Silicon" IBM Tech. Discl. Bull., vol. 14, No. 5, Oct. 1971, p. 1634.
Tochio Yoshihiko
Tohi Atsutomo
Yoshida Masakatsu
Matsushita Electronics Corporation
Rutledge L. Dewayne
Saba W. G.
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