Method of making integration of high value capacitor with ferroe

Details Method of making integration of high value capacitor with ferroe Method of making integration of high value capacitor with ferroe

1995-10-18

1999-06-01

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438 3, H01L 218242

Patent

active

059096241

ABSTRACT:
An integrated circuit capacitor and method for making the same utilizes a ferroelectric dielectric, such as lead-zirconate-titanate ("PZT"), to produce a high value peripheral capacitor for integration on a common substrate with a ferroelectric memory array also utilizing ferroelectric memory cell capacitors as non-volatile storage elements. The peripheral capacitor is linearly operated in a single direction and may be readily integrated to provide capacitance values on the order of 1-10 nF or more utilizing the same processing steps as are utilized to produce the alternately polarizable memory cell capacitors. The high value peripheral capacitor has application, for example, as a filter capacitor associated with the on-board power supply of a passive radio frequency ("RF") identification ("ID") transponder.

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