Method of making integrated devices having long and short minori

Details Method of making integrated devices having long and short minori Method of making integrated devices having long and short minori

1983-09-13

1985-06-04

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 148DIG24, 148DIG46, 148DIG81, H01L 21265, H01L 700

Patent

active

045212562

ABSTRACT:
A process for producing a semiconductor device by which the minority carrier lifetime can be selectively changed in a semiconductor device. A radiation beam is irradiated onto the surface of a semiconductor substrate to shorten the minority carrier lifetime. Then ions are selectively implanted into a region in which the minority carrier lifetime is to be recovered. Finally, the resultant structure is annealed.

REFERENCES:
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patent: 4230791 (1980-10-01), Chu et al.
patent: 4240844 (1980-12-01), Felice et al.
patent: 4249962 (1981-02-01), Celler
patent: 4318750 (1982-03-01), Rai-Choudhary et al.
patent: 4328610 (1982-05-01), Thompson et al.
patent: 4332627 (1982-06-01), Schmitt et al.
patent: 4392893 (1983-07-01), Du et al.
patent: 4415373 (1983-11-01), Pressley
Campisano et al, Solid State Electronics, 21, 1978, 485-488.

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