Method of making integrated circuits utilizing ion implantation

Details Method of making integrated circuits utilizing ion implantation Method of making integrated circuits utilizing ion implantation

1981-12-23

1983-11-01

Saba, W. G.

Metal treatment

Compositions

Heat treating

29571, 29576B, 29576E, 29576W, 29578, 148175, 357 42, 357 49, 357 50, H01L 2120, H01L 21265, H01L 2176

Patent

active

044128681

ABSTRACT:
A method of making an integrated circuit is described. The method includes providing a substrate of single crystal silicon semiconductor material having low minority carrier lifetime, forming an insulating layer of silicon dioxide overlying a major surface of the substrate, forming a plurality of apertures in the insulating layer which expose a plurality of selected portions of the major surface of the substrate, and epitaxially growing a layer of silicon on each of the selected portions of the major surfaces of the substrate.

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