Method of making integrated circuits employing proton-bombarded

Details Method of making integrated circuits employing proton-bombarded Method of making integrated circuits employing proton-bombarded

1983-11-28

1986-07-15

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148175, 148DIG84, 372 45, 372 46, H01L 2176, H01L 21263

Patent

active

045997918

ABSTRACT:
The property of materials in the GaAs/AlGaAs system, whereby at certain doses proton bombarded n-type material becomes highly resistive but p-type material remains highly conductive, is utilized to fabrication of integrated circuits which include buried semiconductor interconnections or bus bars between devices.

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