Method of making integrated circuits employing ion-bombarded InP

Metal working – Method of mechanical manufacture – Assembling or joining

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148 15, 148175, 148DIG84, 372 45, 372 46, H01S 318, H01L 21208

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active

045971650

ABSTRACT:
The property of materials in the InP system, whereby helium ion or deuteron bombarded p-type material becomes highly resistive but n-type material remains relatively conductive, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.

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patent: 4410994 (1983-10-01), Ota et al.
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"The Electrical Characteristics of Ion Implanted Compound Semiconductors", Nuclear Instruments and Methods, (1981), pp. 553-571, J. P. Donnelly et al.
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Hsieh et al., Appl. Phys. Letts. 28 (1976), 709.

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