Method of making integrated circuits

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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Details

156643, 156649, 427 94, 427 96, 430313, 430318, B05D 512, H01L 21306

Patent

active

043339654

ABSTRACT:
A method of reducing lateral field oxidation in the vicinity of the active regions of a silicon substrate in which integrated circuit elements are to be formed. Mesas, the tops of which are the active regions, are formed by ion beam etching of the silicon substrate. The mesas are protected by caps of silicon nitride overlying the top and sides of the mesas during field oxide formation. Subsequently the caps of silicon nitride are removed and the exposed sides of the mesas are oxidized to form a thick layer of silicon dioxide contiguous to the mesas.

REFERENCES:
patent: 4110125 (1978-08-01), Beyer

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