Method of making integrated bipolar semiconductor device by firs

Details Method of making integrated bipolar semiconductor device by firs Method of making integrated bipolar semiconductor device by firs

1985-04-08

1986-11-18

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29578, 148 15, 148187, 148DIG10, 357 34, 357 91, H01L 21265, H01L 21225

Patent

active

046227385

ABSTRACT:
A method is presented for fabricating a bipolar semiconductor device utilizing a combination of junction isolation, oxide isolation, stepper lithography and plasma etching to produce an integrated circuit device having reduced device sizes and increased performance. The method includes the steps of removing portions of a masking layer to expose surface areas of an epitaxial layer, where first type isolation regions are then formed; then forming second type isolation regions in the epitaxial layer, and forming base, emitter and collector contact regions, also in the epitaxial layer; and forming conductive lines on the base, emitter and collector contact regions.

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Hui et al, IEEE Trans. Electron Devices, ED-29 (1982), 554.
Downing et al, Electronics, 57, (Jun. 1984), p. 131.

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