Method of making integral transducer structures employing high c

Details Method of making integral transducer structures employing high c Method of making integral transducer structures employing high c

1988-10-03

1991-03-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437901, 437921, 148DIG12, H01L 2720

Patent

active

050029010

ABSTRACT:
A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacrificial wafer, after being subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by mean of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.

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