Method of making InGaAsP and InGaAs double hetero-structure lase

Details Method of making InGaAsP and InGaAs double hetero-structure lase Method of making InGaAsP and InGaAs double hetero-structure lase

1985-06-06

1987-04-28

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 29576E, 148172, 357 17, 372 45, H01L 21208

Patent

active

046611754

ABSTRACT:
A method is provided for manufacturing a double hetero-structure of InGaAsP/InP, or, alternatively of InGaAs/InP, for use in lasers and LEDs by means of liquid phase epitaxy. The resulting structures emit optical radiation up to a wavelength of about 1.7 .mu.m. As a result of growing the InP cover layer from an Sn-In-P solution, the meltback of the active layer at gap wavelengths .gtoreq.1.5 .mu.m is avoided, and, thus, no anti-meltback layer is needed. By employing an inverted format for the layer structure with respect to the doping of a starting p-InP substrate, the necessarily highly n-doped InP cover layer has the correct conductivity type. The so-produced double hetero-structures are composed of only three epitaxial layers.

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S. H. Groves and M. C. Plonko, Appl. Phys. Letters, vol. 38, No. 12, Jun. 1981, pp. 1003 through 1004.

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