Method of making infrared detector with channel stops

Details Method of making infrared detector with channel stops Method of making infrared detector with channel stops

1994-12-21

1996-06-04

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 5, 437185, 148DIG63, H01L 218254

Patent

active

055232418

ABSTRACT:
Channel stops for MIS infrared photodetector devices in Hg.sub.1-x Cd.sub.x Te by lattice damage (454) between and automatically aligned to MIS gates (408). Also, field plates and guard rings are automatically aligned to MIS gates.

REFERENCES:
patent: 3799803 (1974-03-01), Kraus et al.
patent: 4149904 (1979-04-01), Jones
patent: 4206003 (1980-06-01), Koehler
patent: 4223334 (1980-09-01), Gasner et al.
patent: 4261763 (1981-04-01), Kumar et al.
patent: 4513303 (1985-04-01), Abbas et al.
patent: 4624046 (1986-11-01), Shideler et al.
patent: 4632886 (1986-12-01), Teherani et al.
patent: 4638345 (1987-01-01), Elabd et al.
patent: 4654686 (1987-03-01), Borello
patent: 4684812 (1987-08-01), Tew et al.
patent: 4753896 (1988-06-01), Matloubian
patent: 4766084 (1988-08-01), Bory et al.
patent: 5043293 (1991-08-01), Kinch et al.
Chu et al., "High-Performance backside-illuminated Hg.sub.0.78 Cd.sub.0.22 Te/CdTe(.lambda..sub.co =10 .mu.m)planar diodes", Appl. Phys. Lett. 37(5), Sep. 1, 1980, pp. 486-488.
Bauer et al., "Properties of Silicon Implanted with Boron Ions Through Thermal Silicon", Solid State Elec., vol. 16, 1973, pp. 289-300.

Affiliated with

Also associated with

Rating

Method of making infrared detector with channel stops does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making infrared detector with channel stops, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making infrared detector with channel stops will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-382895