Method of making indium phosphide devices

Details Method of making indium phosphide devices Method of making indium phosphide devices

1986-05-16

1988-04-19

Roy, Upendra

Fishing, trapping, and vermin destroying

357 24, 357 91, 437 29, 437247, H01L 21265, H01L 2124

Patent

active

047389346

ABSTRACT:
Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi-insulating InP layer. The invention is a procedure for doping the insulating layer by ion implantation. Such a procedure is unusually advantageous for fabricating a variety of devices including MISFETs, MESFETs and JFETs.

REFERENCES:
patent: 4404172 (1983-09-01), Gault
patent: 4505023 (1985-03-01), Tseng et al.
patent: 4544417 (1985-10-01), Clarke
patent: 4545824 (1985-10-01), Salvi et al.
patent: 4546540 (1985-10-01), Ueyanagi et al.
patent: 4555273 (1985-11-01), Collins et al.
patent: 4601095 (1986-07-01), Kikuchi et al.
patent: 4611388 (1986-09-01), Pande
Gauneau et al., J. Appl. Phys., 57 (1985), 1029.
Taylor et al., J. Vac. Sci. Technol., B-2 (1984), 522.
Bhattacharya et al., J. Appl. Phys., 55 (1984), 509.
Slater et al., Radiation Effects, 83 (1984), 219.
Journal of Crystal Growth 69, "Growth of Fe-Doped Semi-Insulating InP by MOCVD", J. A. Long, V. G. Riggs and W. D. Johnston, Jr., pp. 10-14 (1984).
Applied Physics Letters, "Electrical Characterization of Fe-Doped Semi-Insulating InP Grown by Metalorganic Chemical Vapor Deposition", A. T. Macrander et al., pp. 1297-1298, Dec. 1984.
Solid-State Electronics, vol. 23, "The Electrical Characteristics of InP Implanted with the Column IV Elements", J. P. Donnelly et al., pp. 1151-1154, 1980.
Applied Physics Letters, vol. 31, No. 7, "Ion-Implanted n- and p-Type Layers in InP", J. P. Donnelly et al., pp. 418-420, 1977.
Ion Implantation: Science and Technology, Academic Press, Inc., New York, 1984.
Ion Implantation: Equipment and Techniques, Springer-Verlag, New York, 1983.
Journal of the Electrochemical Society: Reviews and News, vol. 132, No. 8, "Dielectrics for Annealing of Ion-Implanted III-V Compound Semiconductors", S. Singh, Abstract No. 187, Las Vegas Meeting, 1985.

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