Method of making indium arsenide magnetoresistor

Details Method of making indium arsenide magnetoresistor Method of making indium arsenide magnetoresistor

1990-03-26

1992-06-02

Chaudhuri, Olik

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

148DIG65, 156DIG70, 437918, H01L 2162

Patent

active

051175436

ABSTRACT:
A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.

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