Method of making improved metal silicide fuse for integrated cir

Details Method of making improved metal silicide fuse for integrated cir Method of making improved metal silicide fuse for integrated cir

1985-10-31

1987-07-14

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 29571, 29590, 29623, 148DIG55, 148DIG147, 357 71, H01L 2190

Patent

active

046793100

ABSTRACT:
A method of making an improved metal silicide fuse of controlled thickness for an integrated circuit structure is disclosed. The metal silicide fuse is formed by first forming a layer of known thickness of a metal capable of reacting with silicon to form a metal silicide. A layer of amorphous silicon is then formed over the metal and patterned to form the desired fuse dimensions prior to formation of the silicide. The structure is then sintered to form the metal silicide. Excess silicon remaining over the metal silicide fuse layer is then removed as is unreacted metal from areas where no silicon was present to react with the metal to form the silicide. Control of the thickness of the metal layer which subsequently reacts to form the silicide controls the thickness of the subsequently formed silicide layer to thereby form a fuse of reproducible thickness.

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Chen, D. C. et al., "A New Device Interconnect Scheme . . ." IEDM 984 pp. 118-121.

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