Method of making improved lateral polysilicon diode by treating

Metal working – Method of mechanical manufacture – Assembling or joining

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29571, 29577C, 148 15, 148187, 148DIG10, 357 59, 357 91, H01L 21265, H01L 21425

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active

046164049

ABSTRACT:
An improved lateral polysilicon diode in an integrated circuit structure is disclosed. The diode is characterized by low reverse current leakage, a breakdown voltage of at least 5 volts, and low series resistance permitting high current flow before being limited by saturation. The polysilicon diode comprises a polysilicon substrate having a first zone sufficiently doped to provide a first semiconductor type and a second zone sufficiently doped to provide a second semiconductor type whereby the junction between the two zones forms a diode. The lateral edges of the diode are treated to remove defects to thereby inhibit current leakage around the edges of the lateral diode to lower the reverse current leakage of the diode.

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