Method of making improved aluminum metallization in self-aligned

Details Method of making improved aluminum metallization in self-aligned Method of making improved aluminum metallization in self-aligned

1983-08-17

1985-04-30

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 29578, 148175, 357 65, 357 67, 357 91, B01J 1700, H01L 2126

Patent

active

045142335

ABSTRACT:
A method for manufacturing a semiconductor device, comprises the steps of sequentially forming a gate insulation film, a gate electrode film of polycrystalline silicon and a self-alignment film of silicon nitride on a semiconductor substrate having one conductivity type, patterning the gate electrode film and the self-alignment film in an identical electrode pattern, ion-implanting an impurity of an opposite conductivity type into the substrate using the silicon nitride pattern as a mask, thereby forming source and drain regions, forming an insulation layer on the entire surface of the substrate including the silicon nitride pattern, performing annealing, removing the remaining insulation layer which is located on the silicon nitride pattern, removing the silicon nitride pattern so as to expose the gate electrode pattern, and forming a metal film on the exposed gate electrode pattern.

REFERENCES:
patent: 4149307 (1979-04-01), Henderson
patent: 4282647 (1981-08-01), Richman
patent: 4343082 (1982-08-01), Lepselter et al.
patent: 4375717 (1983-03-01), Tonnel
patent: 4400867 (1983-08-01), Fraser
patent: 4413403 (1983-11-01), Arizumi
A. K. Sinha, Thin Solid Films, 90 (1982) 271.
Technical Digest of International Electron Devices Meeting: P. A. Gargini et al., 54, 1981.
Technical Digest of International Electron Devices Meeting: T. Shibata et al., 647, 1981.

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