Method of making implanted device regions in a semiconductor usi

Details Method of making implanted device regions in a semiconductor usi Method of making implanted device regions in a semiconductor usi

1985-11-25

1987-06-30

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29579, 148 15, 148187, 148DIG82, 148DIG104, H01L 21265

Patent

active

046759816

ABSTRACT:
A method of manufacturing an MOS transistor comprises the steps of forming a silicon nitride film on a central portion of a P-type silicon substrate, forming a first resist pattern on the semiconductor substrate and the film using a mask member having a central opening, ion-implanting a first impurity of P-type into the substrate using the first resist pattern and the film as masks, removing the first resist pattern from the semiconductor substrate, forming a second resist pattern on the substrate using the mask member, and ion-implanting a second impurity of P-type into the substrate at a low acceleration voltage using the second resist pattern as a mask. Then, a gate electrode is formed on the substrate and an impurity of n-type is implanted into the substrate to form source and drain regions of n-type.

REFERENCES:
patent: 4158141 (1979-06-01), Seliger
patent: 4201800 (1980-05-01), Alcorn et al.
patent: 4231811 (1980-11-01), Somekh
patent: 4244752 (1981-01-01), Henderson, Sr. et al.
patent: 4253888 (1981-03-01), Kikuchi
patent: 4311533 (1982-01-01), Roche
patent: 4341571 (1982-07-01), Hiss et al.
patent: 4376658 (1983-03-01), Sigusch
patent: 4394182 (1983-07-01), Maddox, III
patent: 4398964 (1983-08-01), Malwah
patent: 4509991 (1985-04-01), Taur
patent: 4546534 (1985-10-01), Nicholas
patent: 4578859 (1986-04-01), Hause et al.
Tsang, et al., "Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology", IEEE Journal of Solid-State Circuits, vol. SC-17, No. 2, pp. 220-224, 1982.

Affiliated with

Also associated with

Rating

Method of making implanted device regions in a semiconductor usi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making implanted device regions in a semiconductor usi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making implanted device regions in a semiconductor usi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-440189