Method of making IMPATT diode and resulting diode

Details Method of making IMPATT diode and resulting diode Method of making IMPATT diode and resulting diode

1975-02-04

1976-06-08

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 357 91, H01L 21263

Patent

active

039619893

ABSTRACT:
An IMPATT diode is manufactured by doping a silicon n-type epitaxial layer and bombarding the doped layer with ions, preferably protons.

REFERENCES:
patent: 3509428 (1970-04-01), Mankarious
patent: 3595716 (1971-07-01), Kerr et al.
patent: 3730778 (1973-05-01), Shannon et al.
patent: 3756862 (1973-09-01), Ahn et al.
Nelson et al., "Radiation-Enhanced Diffusion of Boron in Silicon," Appl. Phys. Let., vol. 15, No. 8, Oct. 15, 1969, pp. 246-248.

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