Method of making III/V semiconductor lasers

Details Method of making III/V semiconductor lasers Method of making III/V semiconductor lasers

1996-04-04

1997-05-13

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

H01L 21784

Patent

active

056292333

ABSTRACT:
The disclosed novel method of making III/V semiconductor lasers involves cleaving of the wafer along predetermined cleavage planes. A cleavage plane is defined by means of aligned non-continuous depressions. The depressions are spaced from the laser contact regions, and typically are V-grooves produced by photolithography and anisotropic etching. A further surface feature, typically a precisely positioned scribe mark, facilitates cleavage initiation. When carried out in vacuum the novel method can provide high quality, accurately positioned cleavage surfaces, and consequently can facilitate increased yield of high power lasers.

REFERENCES:
patent: 4883771 (1989-11-01), Kumabe et al.
patent: 4904617 (1990-02-01), Muschke
patent: 4997793 (1991-03-01), McClurg
patent: 5314844 (1994-05-01), Imamura
patent: 5393707 (1995-02-01), Canning
patent: 5418190 (1995-05-01), Cholewa et al.

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