Method of making II-VI semiconductor infrared light detector

Details Method of making II-VI semiconductor infrared light detector Method of making II-VI semiconductor infrared light detector

1995-04-07

1996-07-16

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes joining independent crystals

117 54, 117957, 437 91, C30B 2504

Patent

active

055356990

ABSTRACT:
A method for producing a photo-voltaic infrared detector including growing a crystalline CdHgTe layer on a CdTe substrate by liquid phase epitaxy using a growth melt including tellurium as a solvent to which indium is added as a dopant impurity in a concentration of from 0.01 to 0.1 ppm; annealing the CdHgTe layer to produce a p-type CdHgTe layer including indium as an n-type background dopant impurity; forming an n-type region of a desired depth as a light receiving region at the surface of the p-type CdHgTe layer by implanting a dopant impurity producing n-type conductivity and annealing; and forming an n-side electrode on the n-type region and a p-side electrode a prescribed distance from the n-type region on the p-type CdHgTe layer.

REFERENCES:
patent: 4317689 (1982-03-01), Bowers et al.
patent: 4578126 (1986-03-01), Rezek et al.
patent: 4755364 (1988-07-01), LaChapelle, Jr. et al.
patent: 5198370 (1993-03-01), Ohkura et al.
Astles et al, "Improved Control Of Composition And Electrical Properties Of Liquid Phase Epitaxial (CdHg)Te Layers", Journal of Crystal Growth 117, 1992, pp. 213-217.
Yoshikawa et al, "The Behavior Of Oxygen In HgCdTe", Journal of Vacuum Science Technology, vol. A3, No. 1, 1985, pp. 153-155.
Lapides et al, "The Characterization Of Intentional Dopants In HgCdTe Using SIMS, Hall-Effect, And C-V Measurements", Mat. Res. Soc. Symp. Proc. vol. 48, 1985, pp. 365-375.

Affiliated with

Also associated with

Rating

Method of making II-VI semiconductor infrared light detector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making II-VI semiconductor infrared light detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making II-VI semiconductor infrared light detector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1777401