Method of making highly doped surface layer for negative electro

Fishing – trapping – and vermin destroying

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437 2, 257 10, 148DIG120, H01L 3118

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053546946

ABSTRACT:
A negative electron affinity device has acceptor dopant concentration increased proximate the emitter face of the III-V semiconductor layer and within the depletion zone effected by an overlying CsO negative electron affinity coating. Methods to accomplish dopant concentration include diffusion, ion implantation and doping during crystal growth.

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