Method of making high speed silicon switching diodes

Details Method of making high speed silicon switching diodes Method of making high speed silicon switching diodes

1973-10-19

1976-04-06

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Condenser or capacitor

427 92, 427383, B05D 512

Patent

active

039491200

ABSTRACT:
To decrease the lifetime of minority carriers and thus increase switching speed, gold is diffused into a silicon body, the gold being applied by first electroless applying a nickel layer to a single crystal silicon to activate the silicon for reception of gold; and then, electroless applying the gold layer over the silicon layer. In accordance with a preferred process, the electrolessly applied nickel layer is sintered, a second nickel layer is applied thereover and the gold then applied over the second additional nickel layer. A further layer of nickel can be applied electrolessly, over which gold is applied to form a contact surface to which a contact wire can be soldered or fused.

REFERENCES:
patent: 3300340 (1967-01-01), Calandrello et al.
patent: 3362851 (1968-01-01), Dunster
patent: 3539391 (1970-11-01), Lepiane

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