Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1995-11-09
1998-02-24
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438172, H01L 2100
Patent
active
057211612
ABSTRACT:
An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.
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C.G. Van de Walle, "Band Lineups and Deformation Potentials In the Model-Solid Theory", Phys. Rev. B., vol. 39, pp. 1871-1881, Jan. 1989.
Liu Takyiu
Matloubian Mehran
Nguyen Chanh
Chaudhari Chandra
Denson-Low W. K.
Duraiswamy V. D.
Hughes Aircraft Company
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