Method of making high resistance cermet film

Details Method of making high resistance cermet film Method of making high resistance cermet film

1976-11-26

1978-01-31

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

C23C 1500

Patent

active

040714268

ABSTRACT:
A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.

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A. Devenyi et al., "Hopping Conduction Through Localized States In NblAl.sub.2 O.sub.3 Films," Phys. Rev. Lett., vol. 29, pp. 1738-1741, (1972).
J. Henrickson et al., "Structure & Properties of Sputtered Ta-Al.sub.2 O.sub.3 Cermet Thin Films," J. Appl. Phys., vol. 40, pp. 5006-5014, (1969).
J. Harvey et al., "Sputtered Au-Ta-O Cermet For Thin Film Resistors " Thin Solid Films, vol. 8, pp. 427-445, (1971).
L. Maissel et al., "Handbook of Thin Film Technology", McGraw-Hill, 1970, pp. 18-18 to 18-22.

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