Method of making high-performance trench capacitors for DRAM cel

Details Method of making high-performance trench capacitors for DRAM cel Method of making high-performance trench capacitors for DRAM cel

1984-11-30

1987-09-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG109, 437 59, 437 60, 437225, H01L 2172, H01L 21385

Patent

active

046945610

ABSTRACT:
A trench version of a high-capacitance (Hi-C) capacitor for a dynamic random-access-memory (DRAM) cell is made utilizing a modified version of the doping technique described in U.S. Pat. No. 4,471,524 and 4,472,212. A shallow highly doped trench region is thereby formed. At the same time, selected lateral surface portions of the structure are also thereby highly doped. These surface portions permit a direct electrical connection to be easily made between the capacitor and a subsequently formed adjacent access transistor.

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