Fishing – trapping – and vermin destroying
Patent
1991-05-15
1992-04-21
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 47, 437 48, 437 60, 437203, 437919, H01L 2170
Patent
active
051067765
ABSTRACT:
A dRAM memory cell structure and a method for forming the same is disclosed. Each memory cell is formed at a pillar, where the storage plate is an inversion region created by a field plate surrounding all sides of each pillar and separated therefrom by a storage dielectric film. The field plate is formed in a grid shape, and is disposed at the bottom of the trenches surrounding the array of pillars to serve as the fixed plate for all storage capacitors in the array. At the top of each pillar is a diffusion to which the bit lines are connected. Disposed in the trench above the field plate and extending in one direction are word lines. Each word line is formed of a polysilicon filament onto which tungsten is deposited by way of selective CVD. The word line is formed closely adjacent the pillars in its associated row, separated therefrom by a gate dielectric film, the word line is separated from the adjacent row by a dielectric film which is thicker than the gate dielectric, so that the word line will cause conduction between the inversion region and the top diffusion for its associated row, but not for the adjacent row.
REFERENCES:
patent: 4672410 (1987-06-01), Miura et al.
patent: 4751558 (1988-06-01), Kenney
patent: 4830978 (1989-05-01), Teny et al.
patent: 5008214 (1991-04-01), Redwine
Doering Robert R.
Richardson William F.
Shen Bing W.
Barndt B. Peter
Donaldson Richard L.
Hearn Brian E.
Kesterson James C.
Texas Instruments Incorporated
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