Metal treatment – Compositions – Heat treating
Patent
1980-03-24
1982-03-16
Roy, Upendra
Metal treatment
Compositions
Heat treating
29571, 148187, 357 34, 357 59, 357 91, B01J 1700, H01L 21265
Patent
active
043199321
ABSTRACT:
Bipolar transistor devices are formed by employing polysilicon base contacts self-aligned with respect to a diffusion or ion implantation window used to form emitter, intrinsic base and raised subcollector regions. The polysilicon acts as a self-aligned impurity source to form the extrinsic base region therebelow and, after being coated with silicon dioxide on its surface and along the sidewalls of the diffusion or ion implantation window, as a mask. Directional reactive ion etching is used to form a window in the silicon dioxide while retaining it along the sidewalls. Ion implantation, for example, may be used to form, through the window, an emitter, intrinsic base and raised subcollector region. The silicon dioxide is used as an insulator to separate the emitter contact from polysilicon.
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International Business Machines - Corporation
Jordan John A.
Roy Upendra
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