Method of making high mobility multilayered heterojunction devic

Details Method of making high mobility multilayered heterojunction devic Method of making high mobility multilayered heterojunction devic

1987-05-26

1991-08-20

Saba, William G.

Fishing, trapping, and vermin destroying

148DIG67, 148DIG72, 148DIG160, 148DIG169, 156610, 156612, 357 4, 357 16, 357 17, 357 22, 357 232, 357 88, 357 90, 372 45, 437 40, 437110, 437128, 437133, 437913, 437969, H01L 21203, H01L 2938

Patent

active

RE0336718

ABSTRACT:
The mobility of a relatively narrow bandgap semiconductor material can be significantly enhanced by incorporating it into a multilayered structure (10) comprising a first plurality of relatively narrow bandgap layers (12) of the material and a second plurality of wider bandgap semiconductor layers (14) interleaved with and contiguous with the first plurality. The wide bandgap and narrow bandgap layers are substantially lattice-matched to one another, and the wide bandgap layers are doped such that the impurity concentration-thickness product therein is greater than the same product in the narrow bandgap layers. The fabrication of the structure by MBE to enhance the mobility of GaAs is specifically described. In this case, the narrow bandgap layers (12) comprise GaAs and are unintentionally doped to about 10.sup.14 /cm.sup.3, whereas the wide bandgap layers (14) comprise AlGaAs doped n-type to about 10.sup.16 to 10.sup.18 /cm.sup.3. The incorporation of this structure in an FET is also described.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 3626328 (1971-12-01), Esaki et al.
patent: 3721583 (1973-03-01), Blakeslee
patent: 3737737 (1973-06-01), Heywang et al.
patent: 3758875 (1973-09-01), Hayashi
patent: 3838359 (1974-09-01), Hakki et al.
patent: 3882533 (1975-05-01), Dohler
patent: 3911376 (1975-10-01), Thompson
patent: 3915765 (1975-10-01), Cho et al.
patent: 4016505 (1977-04-01), Itoh et al.
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4103312 (1978-07-01), Chang et al.
patent: 4137542 (1979-01-01), Chang et al.
patent: 4141025 (1979-02-01), Bronshtein et al.
patent: 4169997 (1979-10-01), Logan et al.
Chang et al., "Smooth and Coherent Layers of GaAs and AlAs . . . Epitaxy", Appl. Physics Letter, vol. 28, No. 1, Jan. 1, 1976, pp. 39-41.
Luscher, P. E., "Crystal Growth by Molecular Beam Epitaxy", Solid State Technology, vol. 20, No. 12, Dec. 1977, pp. 43-52.
Cho et al., "Continuous Room-Temperature . . . Lasers Prepared by . . . Epitaxy", Appl. Physics Letters, vol. 28, No. 9, May 1, 1976, pp. 501-503.
Chang et al., "New Type of Superlattice", I.B.M. Tech. Discl. Bull., vol. 20, No. 6, Nov. 1977, pp. 2452-2453.
Chang et al., "Molecular-Beam Epitaxy (MBE) of In.sub.1-x Ga.sub.x As and GaSb.sub.1-y As.sub.y ", Appl. Physics Letters, vol. 31, No. 11, Dec. 1, 1977, pp. 759-761.
Lang et al., "Large-Lattice-Relaxation Model . . . in Compound Semiconductors", Physical Review Letters, vol. 39, No. 10, Sep. 5, 1977, pp. 635-639.

Affiliated with

Also associated with

Rating

Method of making high mobility multilayered heterojunction devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making high mobility multilayered heterojunction devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making high mobility multilayered heterojunction devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-999415