Method of making high dielectric constant insulators and capacit

Details Method of making high dielectric constant insulators and capacit Method of making high dielectric constant insulators and capacit

1982-06-11

1984-02-14

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361313, 427 79, H01G 410, H01G 406, B05D 512

Patent

active

044320353

ABSTRACT:
An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400.degree. C. or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.

REFERENCES:
patent: 2693629 (1954-11-01), Denes
patent: 3819990 (1974-06-01), Hayashi et al.
patent: 4062749 (1977-12-01), Young
patent: 4227944 (1980-10-01), Brown et al.
K. Ohta et al., "A Stacked High Capacitor RAM", 1980 IEEE International Solid-State Circuits Conference, pp. 66-67.
S. Zirinsky et al., "Oxidation Mechanisms in WSi.sub.2 Thin Films", Applied Physics Letters, 33(1), Jul. 1, 1978, pp. 76-78.

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