Method of making high density VMOS electrically-programmable ROM

Details Method of making high density VMOS electrically-programmable ROM Method of making high density VMOS electrically-programmable ROM

1983-08-26

1985-03-05

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29571, 29574, 29577C, 29578, 29580, 148 15, 365 96, 365103, 365182, 357 45, 357 46, 357 55, 357 235, H01L 21302, H01L 21467

Patent

active

045022089

ABSTRACT:
A method of making an electrically-programmable memory array in which the memory elements are capacitor devices formed in anisotropically etched V-grooves, providing enhanced dielectric breakdown at the apex of the groove. After breakdown, a memory element exhibits a low resistance to a grounded substrate. The method includes forming access transistors in series with the memory elements, and polycrystalline silicon, deposited to form control gates of the access transistors, also forms address lines. Oxide is formed in the V-groove thinner than the gate oxide thickness formed for the access transistor, providing a lower programming voltage. These factors provide a very small, high speed device.

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