Method of making high density complementary transistors

Details Method of making high density complementary transistors Method of making high density complementary transistors

1982-12-03

1984-07-31

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 42, 357 91, H01L 2122, H01L 2978, H01L 1114

Patent

active

044621515

ABSTRACT:
A simple process is provided which forms a bulk CMOS structure by depositing a layer of material which resists oxidation, e.g., a barrier layer of silicon nitride on an N- semiconductor substrate, forming a P well in the substrate through a given segment of the barrier layer, removing a first segment of the barrier layer to form N+ regions for N channel source and drain and N- substrate contact, removing a second segment of the barrier layer to form a P+ field region, removing a third segment of the barrier layer to form P+ regions for source and drain of a P channel device, forming a first control electrode having a given work function for the P channel device which acts as an ion barrier and then forming a second control electrode between the N channel source and drain regions having a work function different from that of the first control electrode.

REFERENCES:
patent: 3700507 (1972-10-01), Murray
patent: 3920481 (1975-11-01), Hu
patent: 4002501 (1977-01-01), Tamura
patent: 4045250 (1977-08-01), Dingwall
patent: 4110899 (1978-09-01), Nagasawa et al.
patent: 4183134 (1980-01-01), Oehler et al.
patent: 4268321 (1981-05-01), Meguro
patent: 4385947 (1983-05-01), Halfacre et al.
patent: 4391650 (1983-07-01), Pfeifer et al.
patent: 4406710 (1983-09-01), Davies et al.
patent: 4422885 (1983-12-01), Brower et al.
patent: 4433468 (1984-02-01), Kawamata

Affiliated with

Also associated with

Rating

Method of making high density complementary transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making high density complementary transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making high density complementary transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-178962