Method of making heterojunction P-I-N diode

Details Method of making heterojunction P-I-N diode Method of making heterojunction P-I-N diode

2006-05-23

2006-05-23

Prenty, Mark V. (Department: 2822)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S761000

Reexamination Certificate

active

07049181

ABSTRACT:
A heterojunction P-I-N diode switch comprises a first layer of doped semiconductor material of a first doping type, a second layer of doped semiconductor material of a second doping type and a substrate on which is disposed the first and second layers. An intrinsic layer of semiconductor material is disposed between the first layer and second layer. The semiconductor material composition of at least one of the first layer and second layer is sufficiently different from that of the intrinsic layer so as to form a heterojunction therebetween, creating an energy barrier in which injected carriers from the junction are confined by the barrier, effectively reducing the series resistance within the I region of the P-I-N diode and the insertion loss relative to that of homojunction P-I-N diodes.

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