Method of making heterojunction devices by accurate control of g

Details Method of making heterojunction devices by accurate control of g Method of making heterojunction devices by accurate control of g

1978-12-14

1980-09-16

Rutledge, L. DeWayne

Metal treatment

Compositions

Heat treating

148175, 357 18, H01S 300, H01L 21225, H01S 318

Patent

active

042227917

ABSTRACT:
A method of manufacturing a device in which a surface of a body is provided with a gold layer masking against a proton bombardment, in which the gold pattern is formed by means of a photoetching process, the gold pattern is removed after the subsequent proton bombardment of the body. The masking gold layer is obtained by providing on the body a quantity of gold simultaneously with a quantity of an addition which is small as compared with the quantity of gold.

REFERENCES:
patent: 3824133 (1974-07-01), D'Asaro
patent: 3982207 (1976-09-01), Dingle et al.
patent: 4124826 (1978-11-01), Dixon et al.
patent: 4138274 (1979-02-01), Dyment
Foyt et al., "Isolation . . . in GaAs . . . Proton Bombardment," Solid St. Electronics, 12 (1969), 209.
Harris et al., ". . . S/C Injection Lasers," IBM-TDB, 16 (1973), 171.

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