Method of making hard boron nitride by a plasma CVD method emplo

Details Method of making hard boron nitride by a plasma CVD method emplo Method of making hard boron nitride by a plasma CVD method emplo

1993-06-25

1994-02-15

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

4272552, 427314, 427558, 427569, 427585, 427595, 427596, B05D 306

Patent

active

052865339

ABSTRACT:
A method of making hard boron nitride by a plasma CVD method employing beam irradiation comprising the steps of: introducing a boron source gas and a nitrogen source gas into a plasma generated by employing a working gas selected from the group consisted of helium, hydrogen and a mixture of these under pressure of 0.01 through 100 torr, said boron source gas and said nitrogen source gas are provided with volumetric percent of 0.01 through 10% with respect to the working gas; transmitting activating innoculations formed in the plasma to a substrate of which temperature is maintained at 300.degree. through 1100.degree. C; converting the activating innoculations into precursor activating innoculations necessary for forming and growing a hard boron nitride film on the substrate by irradiating an ultraviolet beam to the activation innoculations on the substrate; and accumulating the hard boron nitride on the substrate.

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