Method of making group IV single crystal layers on group III-V s

Details Method of making group IV single crystal layers on group III-V s Method of making group IV single crystal layers on group III-V s

1986-11-26

1988-07-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437108, 437 82, 437184, 437973, 437939, 437946, 156610, 156612, 148DIG17, 148DIG71, 148DIG59, 148DIG154, H01L 21203, H01L 21365

Patent

active

047570300

ABSTRACT:
Solid phase epitaxial growth of single crystal layers on single crystal semiconductor substrates at temperatures low enough to preserve the integrity of other entities on the substrates. Contaminants are removed by low energy ion sputtering at a pressure low enough to delay their reformation before the layer can be deposited on the surface followed by annealing for one hour at 400.degree. C. A method of solid phase epitaxially growing a single crystal layer on a single crystal semiconductor substrate is also disclosed.

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