Method of making graded junction containing amorphous semiconduc

Details Method of making graded junction containing amorphous semiconduc Method of making graded junction containing amorphous semiconduc

1986-12-30

1988-05-03

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437101, 437110, 136258, 427 39, 357 30, 118719, 118723, H01L 3118

Patent

active

047420120

ABSTRACT:
This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma discharge method, it is especially suited for use as a solar battery. An apparatus for the production of said semiconductor device is also disclosed.

REFERENCES:
patent: 4490208 (1984-12-01), Tanaka et al.
patent: 4576830 (1986-03-01), Kiss

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