Method of making graded channel effect transistor

Details Method of making graded channel effect transistor Method of making graded channel effect transistor

1993-09-23

1999-12-21

Niebling, John

Fishing, trapping, and vermin destroying

437110, 437128, H01L 21265, H01L 218258

Patent

active

060041374

ABSTRACT:
A MISFET having a graded semiconductor alloy channel layer of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the location of the charge carriers within the layer. The transconductance of the device can be optimized by controlling the location of the carriers within the channel.

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patent: 5036374 (1991-07-01), Shimbo
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