Method of making gold-cobalt contact for silicon devices

Details Method of making gold-cobalt contact for silicon devices Method of making gold-cobalt contact for silicon devices

1975-11-20

1977-12-27

Kendall, Ralph S.

Coating processes

Electrical product produced

Condenser or capacitor

427 91, 427125, 427383C, 427377, 357 71, 29589, 428621, 428672, H01L 2946, B32B 1504, H01L 21283

Patent

active

040655881

ABSTRACT:
A contact for a silicon device comprises a layer of gold on the silicon, and a layer of cobalt on the gold layer. The contact is made by depositing gold on the silicon, depositing cobalt on the gold and heating the structure at a temperature between about 300.degree. and about 370.degree. C in a reducing gas atmosphere.

REFERENCES:
patent: 3300340 (1967-01-01), Calandrello
patent: 3393091 (1968-07-01), Hartmann
patent: 3597665 (1971-08-01), Quetsch
patent: 3633076 (1972-01-01), Arndt
patent: 3657611 (1972-04-01), Yoneda
patent: 3662454 (1972-05-01), Miller
patent: 3711325 (1973-01-01), Hentzschel
patent: 3715234 (1973-02-01), Stott
patent: 3729807 (1973-05-01), Fujiwara
patent: 3850688 (1974-11-01), Halt
patent: 3982908 (1976-09-01), Arnold

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