Method of making gate turn off switch with anode short and burie

Details Method of making gate turn off switch with anode short and burie Method of making gate turn off switch with anode short and burie

1986-11-28

1988-07-12

Ozaki, George T.

Fishing, trapping, and vermin destroying

357 38, 437152, H01L 2138, H01L 21441

Patent

active

047570253

ABSTRACT:
A GTO switch is provided in which the upper base layer (gate) is formed by a diffusion step. An epitaxial layer grown over the upper base layer contains cathode and gate diffusions which are separated by an undiffused gap. This "buried base" technique provides precise control over the resistivity of the base. The cathode-gate gap provides increased reverse gate voltage capacity. Other features include a large anode short area and a double-layer-metal; contact structure on the cathode-gate surface.

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Yang, "Fundamentals of Semiconductor Devices" McGraw-Hill, N.Y. pp. 25-26, 1978.

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