Method of making gate overlapped lightly doped drain for buried

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 21, 437 24, 148DIG114, H01L 21266

Patent

active

053588797

ABSTRACT:
A process to form poly sidegate LDD structures on buried channel MOSFETs is described. A polysilicon spacer is formed on the gate after source/drain processing. The spacer is later shorted to the main gate by implantation of neutral impurities. The process is particularly suited for SOI technology.

REFERENCES:
patent: 4053925 (1977-10-01), Burr et al.
patent: 4069068 (1978-01-01), Beyer et al.
patent: 4753896 (1988-06-01), Matloubian
patent: 4908326 (1990-03-01), Ma et al.
patent: 4928156 (1990-05-01), Alvis et al.
patent: 4971922 (1990-11-01), Watabe et al.
patent: 4975385 (1990-12-01), Beinglass et al.
patent: 5015598 (1991-05-01), Verhaar
patent: 5030582 (1991-07-01), Miyajima et al.
patent: 5091763 (1992-02-01), Sanchez
patent: 5234850 (1993-08-01), Liao
Ghandhi, S. K., "VLSI Fabrication Principles", pp. 337-340, 1983.
Simple Gate-To-Drain Overlapped MOSFET's, Ih-Chin Chen et al., IEEE, Electron Device Letters, vol. 11, No. 2, Feb. 1990.
A Self-Aligned Inverse-T Gate Fully Overlapped . . . D. S. Wen et al., IEEE 1989 (IEDM).
A Highly Reliable 0.3 .mu.m M-Channel MOSFET . . . I. C. Chen et al.., IEEE 1990, Symposium on VLSI Technology.
Graded-Junction Gate/N Overlapped LDD MOSFET, Yoshinori Okumura, et al., IEEE Transactions on Electron Devices, vol. 38, No. 12, Dec. 1991.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making gate overlapped lightly doped drain for buried does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making gate overlapped lightly doped drain for buried , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making gate overlapped lightly doped drain for buried will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-134862

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.