Method of making gate overlapped lightly doped drain for buried

Details Method of making gate overlapped lightly doped drain for buried Method of making gate overlapped lightly doped drain for buried

1993-04-30

1994-10-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 21, 437 24, 148DIG114, H01L 21266

Patent

active

053588797

ABSTRACT:
A process to form poly sidegate LDD structures on buried channel MOSFETs is described. A polysilicon spacer is formed on the gate after source/drain processing. The spacer is later shorted to the main gate by implantation of neutral impurities. The process is particularly suited for SOI technology.

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