Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Patent
1995-02-10
1995-12-26
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
257401, 257202, H01L 2702
Patent
active
054790344
ABSTRACT:
A gate array base cell which can easily be configured as high conductivity transistor device or a low conductivity transistor device comprises a moat region of first conductivity type, typically heavily doped n-type silicon or heavily doped p-type silicon, for example. A channel region of a different conductivity type separates the moat region into at least three portions. An insulating layer, such as silicon dioxide, for example, and a gate are formed above the channel region. The gate may be formed of polysilicon, for example. Modifications, variations, circuit configurations and an illustrative fabrication method are also disclosed.
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patent: 5055716 (1991-10-01), El Gamel
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Hashimoto Mashashi
Mahant-Shetti Shivaling S.
Donaldson Richard L.
Kesterson James C.
Matsil Ira S.
Prenty Mark V.
Texas Instruments Incorporated
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