Method of making gate and source lines in TFT LCD panels using p

Details Method of making gate and source lines in TFT LCD panels using p Method of making gate and source lines in TFT LCD panels using p

1997-09-12

1999-11-30

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438158, H01L 2103, H01L 2184

Patent

active

059941561

ABSTRACT:
The invention provides a method of making low-resistance conductors on LCD glass panels for use in the fabrication and interconnection of thin film transistors in active-matrix LCDs. The conductors include pure aluminum metal, which has low resistivity and is suitable for the longer lines and conductors required in large-size (18-inch or more, measured diagonally) LCD panels with resolutions of XGA or better. An underlayer of titanium is first deposited on the glass, followed by an overlaer of aluminum. The Al/Ti conductive sheet material is then masked and etched to form lines and other conductors on the LCD glass substrate. A layer of gate dielectric is then deposited, preferably at a temperature of 300.degree. C. or below. The invention minimizes hillock formation on the aluminum conductors without the additional cost and steps of depositing a capping layer of metal overlying the aluminum, and without the use of acid-treated glass.

REFERENCES:
patent: 5153754 (1992-10-01), Whetten
patent: 5340758 (1994-08-01), Wei et al.
patent: 5580800 (1996-12-01), Zhang et al.
patent: 5831283 (1998-11-01), Batey et al.
Article entitled, A Highly Oriented A1[111] Textured Developed on Ultrathin Metal Underlayers by A. Kamijo and T. Mitsuzuka, published in J. Appl. Phys. 77(8), Apr. 15, 1995, pp. 3799-3804.
Article entitled, "Pure Aluminum Process Solution for Advanced LCDs", by R. Pethe, M. Bedekar, E. Demaray, C. Deshpandey and H. Sheo; SPIE vol. 3014, Feb. 1997, pp. 10-17.
Article entitled, "8.4: A Simplified Process for SVGA TFT-LCDS with Single-Layered ITO Source Bus-Lines" by A. Ban, Y. Nishioka, T. Shimada, M. Okamoto, M. Katayama, published in SID 96 Digest, pp. 93-96, 1996.
Article Entitled , 22.2: Pure Al and Al-Alloy Gate-Line Processes in TFT-LCDs by C.W. Kim, C.O. Jeong, H.S. Song, Y.S. Kim, J.H. Kim, J. H. Choi, M. K. Hur, H. G. Yang, J. H. Souk published in SID 96 Digest, pp. 337-340, 1996.
Article entitled , 22.3: Hillock-Free Al-Gate Materials Using Stress-Absorbing Buffer Layer for Large-Area AMLCDs by H. S. Seo, I. W. Kim, G. H. Lee, C. H. Hong and H. S. Soh publishsed in SID 96 Digest, pp. 341-344, 1996.
Article entitled, 22.4: Reliability Improvements for an a-Si TFT Matrix by Using Al:Ti Alloy by Y. Zhao, S. Xiong, C. Gu, Z.P. Wang, Z. Zhou, Z. Meng, J. Li, Y. Dai, L. Yao, J.J. Zhang, S. Ding, Z.L. Sun, W.D. Geng, H. Y. Li and D.L. Li, published in SID 96 Digest, pp. 345-348, 1996.
Article entitled, 35.4: Low-Resistivity AlAlloy for Large-Size and High Resolution TFT-LCDs by M. Hayashi, K. Inoue, S. Noumi, K. Sakata, T. Takeguchi, T. Morita, T. Eguchi, published in SID 97 Digest, pp. 885-888, 1997.
Article entitled, "S4-2 9.5-in. and 13.8-in. Diagonal TFT-LCDs with Low Resistance MoW Gate", by M. Ikeda, T. Oka, M. Atsuta, Y. Hara, Y. Tsuji, K. Susuki, Y. Kataoka, T. Dohi, Y. Sigemitsu, H. Tsuji, published in Asia Display '95, pp. 41-44., 1995.

Affiliated with

Also associated with

Rating

Method of making gate and source lines in TFT LCD panels using p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making gate and source lines in TFT LCD panels using p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making gate and source lines in TFT LCD panels using p will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1670896