Method of making GaInAsP layers for photodetectors

Details Method of making GaInAsP layers for photodetectors Method of making GaInAsP layers for photodetectors

1983-08-23

1985-11-05

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148171, 148172, 29572, 29576E, H01L 21208

Patent

active

045511861

ABSTRACT:
A method for making the light-sensitive layer of a GaInAsP photodetector for the wavelength range from about 1350 nm to 1400 nm by liquid-phase epitaxy. A melt is saturated with phosphorus by introducing a first InP substrate into a ternary solution of GaAs and InAs in indium and maintaining the temperature constant at about 690.degree. C. for a few hours. After removal of the first substrate, the temperature is lowered by about 5.degree. C., and a second InP substrate, on which the desired layer is grown, is introduced into the melt. The cooling rate is approximately 1.degree. C./hr.

REFERENCES:
patent: 4142924 (1979-03-01), Hsieh
patent: 4319937 (1982-03-01), Holonyak et al.
patent: 4355396 (1982-10-01), Hawrylo et al.
patent: 4372791 (1983-02-01), Hsieh
patent: 4373989 (1983-02-01), Mattauch et al.
patent: 4377865 (1983-03-01), Sugino et al.
patent: 4382265 (1983-05-01), Pearsall
Hsieh, IEEE J. of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981, pp. 118-122.
Stringfellow, J. of Crystal Growth, vol. 27 (1974), pp. 21-34.
Takahei et al., Japanese Journal of Applied Physics, vol. 20, No. 4, Apr. 1981, pp. L313-L316.

Affiliated with

Also associated with

Rating

Method of making GaInAsP layers for photodetectors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making GaInAsP layers for photodetectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making GaInAsP layers for photodetectors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-294630