Method of making GaAs MOSFET with low source resistance yet havi

Details Method of making GaAs MOSFET with low source resistance yet havi Method of making GaAs MOSFET with low source resistance yet havi

1987-03-04

1988-11-01

Roy, Upendra

Fishing, trapping, and vermin destroying

357 91, 437 22, 437176, 437912, H01L 21265, H01L 2948

Patent

active

047820314

ABSTRACT:
In an FET, two first semiconductor regions of higher impurity concentration and smaller thickness, for source electrode and drain electrode, are formed in a second semiconductor region of lower impurity concentration and larger thickness for a gate electrode, thereby obtaining a low source resistance and small leak current.

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Darley, H. M., and Houston, T. W., "Optimization of Self-Aligned Silicon MESFETS . . . " IEDM Technical Digest 12/80, pp. 34-37.
Codella et al., IBM-TDB, vol. 26, (1983), 1988.
Tiwari, IBM-TDB, 27 (1984), 1351.

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